KEY BENEFITS n Increase life time by a factor of 15 increase power output by 30% Junction temperature up to 175 º C OR n n Danfoss Bond Buffer® (DBB®) is a breakthrough to current aluminium based bonding and joining technology. With copper layer on the semiconductor, sintering and copper bond wire, DBB® ushers the new era in module packaging. The increasingly ambitious requirements of the automobile, industry and renewable energy markets demand that power modules must increase in both – power density and lifetime. State-of-the-art module concepts have reached their limitations in terms of power density, current carrying capability and reliability. Connection technologies for the semiconductors are a bottleneck of their performance. SUPERIOR YET FLEXIBLE Unlike other new technologies in bonding and joining, DBB® is semiconductor source independent. DBB® technology is available both in custom specific as well industry standard packaging. No changes in gate driver, resistors or any other passive component is needed when replacing an existing module to comparable DBB® module. What is DBB®? To overcome the limitation of current module technology a new bonding and joining technology for power modules has been developed. The solder joint between the DCB-substrate and the semiconductor is replaced by a sintered joint. In addition, a copper plate is sintered on top of the semiconductor surface metallization, and traditional aluminum bond wires are replaced by copper wires. The combination of these improvements – sintered connection between semiconduction and DBC-substrate, the sintered copper Bond Buffer and copper bond wires – is known as Danfoss Bond Buffer@ (DBB®) technology. 2 DKSP.PB.402.A2.02
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